1. Size: 8.3 * 4.2mm 2. Sensitive device area: 2.0 × 1.0 mm2 3. Substrate material: silicon 4. Substrate thickness: 0.5mm 5. Wavelength 7- 14μm 6. Average transmission rate:> 75% 7. Output:> 2.5V (420 ° k black body modulation frequency 0.3-3.0Hz 1Hz bandwidth 72.5db gain) 8. Noise: <200mV (mVp-p) (25 °) 9 (VD = 10V, Rs = 47kω, 25 °) 12. Supply voltage: 0.4-1.1V (VD = 10V, Rs = 47kω, 25 °) 13. Operating temperature: -20 ° - +70 ° 14. Storage temperature: -35 ° - + 80 ° 15. Shape: 139 ° × 126 ° 16.
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